Renesas Unveils 650V GaN Device in Dual-Side-Cooled 8x8mm Package for 800V AI Data Centres
· TexaHub · Semiconductors, AI in Industry, Technology Trends
Renesas is sampling a 20mΩ, 650V GaN device in a dual-side-cooled 8x8mm package aimed at 800V DC power conversion in megawatt-scale AI racks, with volume output planned for mid-2027.
A smaller, dual-side-cooled GaN switch
Renesas Electronics announced on 30 September what it describes as the industry's first 650V gallium nitride (GaN) device with dual-side cooling, aimed at megawatt-scale AI data centres [1]. The part, designated TP65H020G4PLSGBD, is a D-mode device with an on-resistance of 20 milliohms, housed in an 8mm x 8mm PQFN package [1][2].
The device is built on the company's Gen IV Plus GaN technology and supports operation at up to 700V [2]. According to Renesas, it dissipates heat through both the top and bottom of the package, lowering top-side thermal impedance by 10% compared with conventional top-side-cooled packages [1][2]. The company also says its footprint is 57% smaller than the existing 10mm x 15mm TOLT package [1].
Renesas states that engineers can drive the device with a standard silicon gate driver and switch into the MHz frequency range to minimise passive components, without needing a specialised E-mode driver [1][2]. The package was, the company says, "defined in collaboration with major AI infrastructure customers, enabling an industry-standard footprint for sourcing flexibility" [1].
Why density matters for 800V racks
The device targets the 800V DC/DC intermediate bus converter stage that steps power down to 48V, 12V or 6V rails, as well as battery backup and capacitor bank stages in sidecar power racks [2][3]. Renesas frames the problem in terms of physical constraints: "As rack power climbs from roughly 120 kW toward megawatt scale, space and heat have become critical factors in sustaining the power level" [1]. Power Electronics News reported that the smaller footprint is intended to help increase power density where circuit-board area is constrained [3].
"Customers building megawatt-scale AI data centers are running out of board space and thermal headroom before they hit their power limits," said John Wiggenhorn, senior product line director of high-voltage GaN at Renesas [1][2]. "With the industry's first dual-side-cooled 650V GaN, we cool the device from both sides and cut the footprint significantly," he added [1].
Reference designs and availability
Renesas says a 6kW, 800V-to-48V LLC DC transformer reference design built on the device and controlled by its RA6T3 microcontroller reaches a power density of 2.6kW/in³ [1][2]. The company reports that per-module testing measured full-load efficiency 0.21% higher than an equivalent TOLT-based board [1]. Semiconductor Today noted that 800V-to-12V and 6V intermediate bus converter reference designs also use the new package, which Renesas says deliver similar gains [2].
Renesas is sampling the device to major AI data-centre OEMs and ODMs, with mass production planned for mid-2027 [2]. The company plans to show it as part of its 800V power solutions at the OCP Global Summit in San Jose, California, from 12 to 15 October [1][2].
Sources
[1] Renesas Unveils Industry's First 650V GaN in Dual-Side Cooled 8x8mm Package for Megawatt-Scale AI Data Centers — Renesas Electronics, 30 Sep 2026
[2] Renesas unveils first 650V GaN in dual-side-cooled 8mm x 8mm package for megawatt-scale AI data centers — Semiconductor Today, 1 Oct 2026
[3] Renesas 650V GaN Enables High-Density 800V AI Power — Power Electronics News, 30 Sep 2026